Advantages of Using GaN FETs in Satellite Applications
Silicon FETs have long since dominated the space and high reliability industry, but they are quickly approaching their theoretical limit of performance. To move forward, we need to look towards wide bandgap semiconductors such as radiation hardened GaN FETs.
These GaN FETs have several advantages, such as fewer parasitics and much higher efficiencies, over traditional Silicon FETs.
This white paper:
- Outlines the characteristics of GaN FETs in comparison to silicon MOSFETs
- Details benefits such as size and weight, efficiency, EMI, and the potential of fewer voltages and higher loop bandwidth
- Examines the gate driver that allows designers to use GaN FETs to their full advantage