GaN MMIC power amps enable wide bandwidth spread

The CMPA2735030S and CMPA2735015S from are gallium nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuits (MMICs) that contain a two-stage reactively matched amplifier design approach, which enables the user to achieve wide bandwidths. According to Wolfspeed, GaN MMICs are higher-performing in some applications compared to silicon or gallium arsenide, including having higher breakdown voltage, higher saturated electron drift velocity, higher thermal conductivity, and greater power density.

The group of power amps is suited for military radar applications involving L-Band, S-Band, X-Band, C-Band, and Ku-Band and are available in both 15 W and 30 W options. The MMICs operate in the 2.7 – 3.5 GHz range and carry an operating voltage of 50 V. The small signal gain is tested at between 30 and 32 dB, while the typical power added efficiency (PAE) is measured at 50 percent. Both can also be packaged in a 5 by 5 mm surface mount QFNL-32 package or as bare die.

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