GaN transistors for electronic warfare and communication systems

has expanded its family of gallium nitride (GaN) radio frequency (RF) power transistors to include six driver or final-stage amplifiers that have frequency coverage ranging between 1 to 3000 MHz. The additional line of transistors join NXP’s portfolio of RF power transistors aimed at defense systems that operate in HF/VHF/UHF/ L-band radar, IFF transponders, and avionics systems.

The GaN and SiC transistors combine high power density, ruggedness, and flat frequency response over wide bandwidths. The transistors’ broadband frequency coverage from HF to S-band allows users to cover frequencies used by radios or at the lower-frequency sections of electronic systems. The transistors include MMRF5011N (28V) and MMRF5013N (50V), which operate from 1 to 3000 MHz with RF output power up to 12 W CW, 15 dB gain, and 60 percent efficiency, housed in an OM-270-8 overmolded plastic package. The MMRF5015NR5 – which operates from 1 to 2700 MHz with RF output power up to 125 W CW, gain of 16 dB, and efficiency of 64 percent – is housed in an OM-270-2 over-molded plastic package. Additional transistors in the family include the MMRF5019N, MMRF5021H, and MMRF5023N.

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